PCS: 1
微型激光二极管底座
微型薄膜金属化氮化铝底座,带有预先沉积的AuSn,用于安装激光二极管和LED。
材料
等级 170 * 200
TC W / mK ~170~200
CTE PPM /℃ 〜4.6 〜4.6
表面光洁度 ~0.15μmRa
厚度范围 0.25 - 1.5毫米
*标准材料
机械尺寸
闵。长度和宽度0.5毫米x 0.5毫米
最大。长和宽101.6 x 101.6毫米
宽容类型 。 高规格。
长度和宽度±0.05 mm ±0.02 mm
边缘切屑 <0.05 mm <0.01 mm
导电或绝缘
The AlN mounts can be metallised with the option of making the mount conducting or insulating. For conductive AlN, metallisation is deposited onto at least two of the side walls as well as the top and bottom surfaces. The thickness of the side wall metallisation is tailored depending on the electrical load to be carried.
Metallisations
Various metallisation schemes can be applied, the standard is TiW/Ni/Au.
The Au, Ni layer thicknesses depend on the application. The gold is primarily used to provide the electrical conductivity on the sidewalls and is nominally 0.2 µm thick on the faces and a total of 0.3~0.5 µm thick on the walls. To ensure the gold is properly covered the nickel barrier layer is usually also specified at 0.1µm on the faces. Generally for gold wire bonding 0.5µm minimum of gold is required. A standard specification for the top and bottom faces would be:
Soldering only required 0.1TiW / 0.1Ni / 0.2Au
Au wire bonding required 0.1TiW / 0.2Ni / 0.5Au
Pre-deposited AuSn
可以在顶面和底面中的一个或两个上施加薄的真空沉积的AuSn层。标准合金比率标称为75Au / 25Sn,通常为~3.5-5.5微米厚。合金比例也可以根据具体应用进行调整。
Contact information
Sales: sales@thinfilmcircuit.com
Engineer: vincent-wmc@foxmail.com
WeChat: thinfilmcircuit
Phone: +86 13061370991